2SK3070STL-E Просмотр технического описания (PDF) - Renesas Electronics
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производитель
2SK3070STL-E Datasheet PDF : 9 Pages
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2SK3070(L), 2SK3070(S)
Reverse Drain Current vs.
Source to Drain Voltage
100
10 V
80
5V
60
VGS = 0, –5 V
40
Maximum Avalanche Energy vs.
Channel Temperature Derating
500
IAP = 50 A
400
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
300
200
20
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
100
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 1.25°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
L
IAP
Monitor
D. U. T
VDD
50 Ω
Avalanche Waveform
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.9.00 Sep 07, 2005 page 5 of 8
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