2SK3070STL-E Просмотр технического описания (PDF) - Renesas Electronics

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производитель

2SK3070STL-E

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK3070(L), 2SK3070(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) =4.5 mΩ typ.

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

REJ03G1063-0900

(Previous: ADE-208-684G)

Rev.9.00

Sep 07, 2005

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK(L))

4

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1))

D

4

1

23

123

G

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.9.00 Sep 07, 2005 page 1 of 8

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