2SK2926 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK2926 Datasheet PDF : 9 Pages
| |||
2SK2926(L), 2SK2926(S)
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature TC (°C)
Typical Output Characteristics
10 V 6 V 5 V
20
4 .5 V
4V
16
12
3.5 V
8
3V
4
Pulse Test
VGS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
ID = 20 A
0.4
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 8
Maximum Safe Operation Area
1000
300
100
30
10
3
1
0.3
OtlihmpisietearadretiboaynisDRinCDOS(pPoeWnra)=tio1n0(mTcs1=1(m102ss051h°µ0oCstµ))s
0.1 Ta = 25°C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDDSS (V)
Typical Transfer Characteristics
20
VDS = 10 V
Pulse Test
16
12
8
25°C
Tc = 75°C
4
–25°C
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
0.02
0.01
1
VGS = 4 V
10 V
2
5 10 20 50 100
Drain Current ID (A)
Share Link: 