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Номер в каталоге
Компоненты Описание
2SK2802 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK2802
Silicon N Channel MOS FET Low Frequency Power Switching
Hitachi -> Renesas Electronics
2SK2802 Datasheet PDF : 8 Pages
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2SK2802
Typical Capacitance vs.
Drain to Source Voltage
500
V
GS
= 0
200
f = 1 MHz
100
Coss
50
20
Ciss
10
5
Crss
2
1
0
4
8
12 16
20
Drain to Source Voltage V
DS
(V)
10000
3000
1000
300
100
Switching Characteristics
t
d(off)
tf
tr
t
d(on)
30
10
0.05
V
GS
= 4 V, V
DD
= 10 V
PW = 5 µs, duty < 1 %
0.1 0.2
0.5
1
Drain Current I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
0.5
0.4
5V
0.3
V
GS
= 0
0.2
0.1
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
5
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