2SK2955 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SK2955

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2955

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

I Note3

AP

E Note3

AR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note:

1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

Ratings

Unit

60

V

±20

V

45

A

180

A

45

A

45

A

173

mJ

100

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 60

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

I GSS

—

Zero gate voltege drain current

I DSS

—

Gate to source cutoff voltage

VGS(off)

1.5

Static drain to source on state

RDS(on)

—

resistance

RDS(on)

—

Forward transfer admittance

|yfs|

24

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 4. Pulse test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

10

µA

—

2.5 V

0.010 0.013 Ω

0.015 0.025 Ω

40

—

S

2200 —

pF

1050 —

pF

320 —

pF

25

—

ns

200 —

ns

320 —

ns

240 —

ns

0.95 —

V

60

—

ns

Test Conditions

ID = 10mA, VGS = 0

IG = ±100µA, VDS = 0

VGS = ±16V, VDS = 0

VDS = 60 V, VGS = 0

ID = 1mA, VDS = 10V

ID = 20A, VGS = 10VNote4

ID = 20A, VGS = 4V Note4

ID = 20A, VDS = 10V Note4

VDS = 10V

VGS = 0

f = 1MHz

ID = 20A, VGS = 10V

RL = 1.5Ω

IF = 45A, VGS = 0

IF = 45A, VGS = 0

diF/ dt =50A/µs

2

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