2SK2955 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SK2955

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2955

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS =0.010 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

TO–3P

ADE-208-564B (Z)

3rd. Edition

Jun 1998

D

G

1. Gate

1

2

3

2. Drain

(Flange)

3. Source

S

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