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Номер в каталоге
Компоненты Описание
2SK2795 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK2795
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
2SK2795 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK2795
Drain to Source Saturation Voltage
vs. Drain Current
10
3
1
0.3
0.1
0.03
0.01
1
25°C
75°C
Tc = –25°C
V
DS
= 6 V
Pulse Test
3 10 30 100 300 1000
Drain Current I
D
(mA)
Gate to Source Cutoff Voltage vs.
Ambient Temperature
1.0
0.8
10
mA
0.6
I
D
=
1
mA
0.1
mA
0.4
0.2
V
DS
= 5 V
0
–25
0 25 50 75 100 125
Ambient Temperature Ta (°C)
Input Capacitance vs.
Gate to Source Voltage
10
9
8
7
6
–6 –4 –2 0
V
DS
= 0
f = 1 MHz
2 46
Gate to Source Voltage V
GS
(V)
Output Capacitance vs.
Drain to Source Voltage
100
V
GS
= 0
50
f = 1 MHz
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10
Drain to Source V
DS
(V)
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