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Номер в каталоге
Компоненты Описание
2SK2795 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK2795
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
2SK2795 Datasheet PDF : 6 Pages
1
2
3
4
5
6
Main Characteristics
2SK2795
Maximum Channel Power
Dissipation Curve
2.0
1.5
1.0
0.5
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
1.0
6V
5V
3.5
V
0.8
4.5 V
3V
4V
0.6
2.5
V
0.4
2V
1.5 V
0.2
Pulse Test
V
GS
= 1 V
0
1 234 56
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
0.20
V
DS
= 5 V
Pulse Test
0.16
0.12
Tc = –25°C
0.08
75°C
25°C
0.04
0
0.4 0.8 1.2 1.6 2.0
Gate to Source Voltage V
GS
(V)
Forward Transfer Admittance
vs. Drain Current
1
0.5
25°C
Tc = –25°C
0.2
0.1
0.05
75°C
0.02
0.01
0.001 0.003 0.01 0.3
V
DS
= 5 V
Pulse Test
0.1 0.3 1
Drain Current I
D
(A)
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