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Номер в каталоге
Компоненты Описание
2SK2735S Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK2735S
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2735S Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
2SK2735(L), 2SK2735(S)
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (
°
C)
Maximum Safe Operation Area
500
200
100
50
20
10
5
Operation in
PW
=
10
100
1
ms
µ
s
ms
(1shot)
2
this area is
1
limited by R
DS(on)
0.5
Ta = 25
°
C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
50
20
I
D
= 20 A
40
16
V
DD
= 5 V
10 V
30
V
DS
25 V
12
V
GS
20
8
10
V
DD
= 25 V
4
10 V
5V
0
0
8
16 24
32 40
Gate Charge Qg (nc)
4
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