2SK2528-01 Просмотр технического описания (PDF) - Fuji Electric
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2SK2528-01 Datasheet PDF : 2 Pages
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N-channel MOS-FET
900V 3,6Ω 5A 80W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2528-01
FAP-II Series
Drain-Source On-State Resistance
RDS(on) = f(Tch); ID=2,5A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
1
↑
2
↑
3
→ VDS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
→ Tch [°C]
Typical Transconductance
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
↑
4
↑
5
→ VGS [V]
Gate Threshold Voltage
VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑
6
→ ID [A]
Typical Capacitances
C=f(VDS); VGS=0V; f=1MHz
↑
7
→ ID [A]
Typical Gate Charge Characteristic
VGS=f(Qg); ID=5A
→ Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test
↑
8
↑↑
9
→ VDS [V]
Power Dissipation
PD=f(Tc)
d
↑
10
→ Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
↑
↑
12
→ VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
→ Tch [°C]
→ VDS [V]
t [s] →
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
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