HVX-2 Series Power MOSFET
2SK2668 ( FP3W90HVX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 900V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±30V, VDS = 0V
Forward Transconductance
gfs ID = 1.5A, VDS = 10V
Static Drain-Source On-state Resistance RDS(ON) ID = 1.5A, VGS = 10V
Gate Threshold Voltage
VTH ID = 1mA, VDS = 10V
Source-Drain Diode Forward Voltage
VSD IS = 1.5A, VGS = 0V
Thermal Resistance
θjc junction to case
Total Gate Charge
Qg VDD = 400V, VGS = 10V, ID = 3A
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 25V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 1.5A, RL = 100Ω, VGS = 10V
Turn-Off Time
toff
Min. Typ. Max. Unit
900
V
250 μA
±0.1
1.5 2.5
S
3.5 4.7 Ω
2.5 3.0 3.5 V
1.5
3.12 ℃/W
30
nC
630
16
pF
67
40 70 ns
140 230
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