2SK1637 Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

2SK1637

Silicon N Channel MOS FET

Renesas Electronics 

2SK1637

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Electrical Characteristics

Symbol

VDSS

VGSS

ID

ID(pulse)*1

IDR

Pch*2

Tch

Tstg

Item

Symbol Min

Typ

Drain to source breakdown voltage V(BR)DSS 600

—

Gate to source breakdown voltage V(BR)GSS ±30

—

Gate to source leak current

IGSS

—

—

Zero gate voltage drain current

IDSS

—

—

Gate to source cutoff voltage

Static drain to source on state

resistance

VGS(off)

2.0

—

RDS(on)

—

1.8

Forward transfer admittance

Input capacitance

|yfs|

2.2

3.5

Ciss

—

600

Output capacitance

Coss

—

140

Reverse transfer capacitance

Crss

—

25

Turn-on delay time

td(on)

—

8

Rise time

tr

—

30

Turn-off delay time

td(off)

—

60

Fall time

tf

—

35

Body to drain diode forward voltage VDF

—

0.9

Body to drain diode reverse recovery trr

—

300

time

Note: 3. Pulse test

Ratings

600

±30

4

16

4

35

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C

°C

Max

—

—

±10

250

3.0

2.4

—

—

—

—

—

—

—

—

—

—

(Ta = 25°C)

Unit

Test conditions

V ID = 10 mA, VGS = 0

V IG = ±100 µA, VDS = 0

µA VGS = ±25 V, VDS = 0

µA VDS = 500 V, VGS = 0

V ID = 1 mA, VDS = 10 V

Ω

ID = 2 A, VGS = 10 V *3

S

ID = 2 A, VDS = 10 V *3

pF VDS = 10 V, VGS = 0,

pF f = 1 MHz

pF

ns ID = 2 A, VGS = 10 V,

ns RL = 15 Ω

ns

ns

V IF = 4 A, VGS = 0

ns IF = 4 A, VGS = 0,

diF/dt = 100 A/µs

Rev.2.00 Sep 07, 2005 page 2 of 6

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