2SK1301-E Просмотр технического описания (PDF) - Renesas Electronics

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производитель

2SK1301-E

Silicon N Channel MOS FET

Renesas Electronics 

2SK1301

Silicon N Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device

 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

RENESAS Package code: PRSS0004AC-A

(Package name: TO-220AB)

D

G

123

S

REJ03G0920-0200

(Previous: ADE-208-1259)

Rev.2.00

Sep 07, 2005

1. Gate

2. Drain

(Flange)

3. Source

Rev.2.00 Sep 07, 2005 page 1 of 6

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