2SJ496 Просмотр технического описания (PDF) - Renesas Electronics
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2SJ496 Datasheet PDF : 8 Pages
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2SJ496
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A)
• 4 V gate drive devices.
• Large current capacitance
ID = –5 A
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
REJ03G0870-0300
(Previous: ADE-208-482A)
Rev.3.00
Sep 07, 2005
D
1. Source
2. Drain
3. Gate
S
Rev.3.00 Sep 07, 2005 page 1 of 7
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