2SJ496(2011) Просмотр технического описания (PDF) - Renesas Electronics
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производитель
2SJ496 Datasheet PDF : 8 Pages
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2SJ496
Reverse Drain Current vs.
Source to Drain Voltage
–10
–8
–6
–10 V
–4
–5 V
VGS = 0, 5 V
–2
Pulse Test
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Preliminary
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.5
IAP = –5 A
VDD = –25 V
2.0
duty < 0.1 %
Rg ≥ 50 Ω
1.5
1.0
0.5
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Ta = 25°C
0.3 0.2
0.1
0.1
0.05
0.03 0.02
0.01
0.01 1shot pulse
0.003
θch – a (t) = γ s (t) • θch – a
θch – a = 139°C/W, Ta = 25°C
PDM
D=
PW
T
PW
T
0.001
0.00001 0.0001 0.001
0.01
0.1
1
10
Pulse Width PW (S)
100 1000 10000
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D.U.T
VDD
Avalanche Waveform
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
R07DS0433EJ0400 Rev.4.00
Jun 07, 2011
Page 5 of 7
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