2SJ496TZ-E(2011) Просмотр технического описания (PDF) - Renesas Electronics
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2SJ496TZ-E Datasheet PDF : 8 Pages
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2SJ496
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
–2 A
0.3
ID = –5 A
0.2
VGS = –4 V
–1 A
0.1
–10 V
–5 A
–1 A, –2 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.1 –0.2
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
ID = –5 A
–25 V
–20
–50 V
–4
–40
VDS
VGS
–8
–60
–12
VDD = –50 V
–25 V
–80
–10 V
–16
–100
0
8
16 24 32
Gate Charge Qg (nc)
–20
40
Preliminary
Forward Transfer Admittance vs.
Drain Current
20
10
5
Tc = –25°C
25°C
2
75°C
1
0.5
0.2
–0.1 –0.2
–0.5 –1
VDS = –10 V
Pulse Test
–2 –5 –10
Drain Current ID (A)
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
Coss
100
50
Crss
20 VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
300
td(off)
100
tf
30
tr
td(on)
10
3
1
–0.1 –0.2
VGS = –10 V, VDD = –30 V
PW = 5 μs, duty ≤ 1 %
–0.5 –1 –2 –5 –10
Drain Current ID (A)
R07DS0433EJ0400 Rev.4.00
Jun 07, 2011
Page 4 of 7
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