2SJ496TZ-E(2011) Просмотр технического описания (PDF) - Renesas Electronics
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2SJ496TZ-E Datasheet PDF : 8 Pages
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2SJ496
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 4. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IDSS
IGSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
–60
±20
—
—
–1.0
—
—
3
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.12
0.17
5
600
290
80
10
25
95
55
–1.0
65
Max
—
—
–10
±10
–2.0
0.16
0.24
—
—
—
—
—
—
—
—
—
—
Unit
V
V
μA
μA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 μA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = –1 mA, VDS = –5 V
ID = –2.5 A, VGS = –10 V Note 4
ID = –2.5 A, VGS = –4 V Note 4
ID = –2.5 A, VDS = –10 V Note 4
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –10 V
ID = –2.5 A
RL = 12 Ω
IF = –5 A, VGS = 0
IF = –5 A, VGS = 0
diF/dt = 50 A/μs
R07DS0433EJ0400 Rev.4.00
Jun 07, 2011
Page 2 of 7
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