2SJ496TZ-E(2011) Просмотр технического описания (PDF) - Renesas Electronics

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производитель

2SJ496TZ-E
(Rev.:2011)

Silicon P Channel MOS FET

Renesas Electronics 

2SJ496

Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A)

• 4 V gate drive devices.

• Large current capacitance

ID = –5 A

Outline

RENESAS Package code: PRSS0003DC-A

(Package name: TO-92 Mod)

321

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 100 μs, duty cycle ≤ 10%

2. Value at Ta = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

G

Symbol

VDSS

VGSS

ID

ID (pulse) Note 1

IDR

IAP Note 3

EAR Note 3

Pch Note 2

Tch

Tstg

Preliminary Datasheet

R07DS0433EJ0400

(Previous: REJ03G0870-0300)

Rev.4.00

Jun 07, 2011

D

1. Source

2. Drain

3. Gate

S

Value

–60

±20

–5

–20

–5

–5

2.14

0.9

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

mJ

W

°C

°C

R07DS0433EJ0400 Rev.4.00

Jun 07, 2011

Page 1 of 7

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