2SJ484WYTR Просмотр технического описания (PDF) - Renesas Electronics
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2SJ484WYTR Datasheet PDF : 7 Pages
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2SJ484
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
VGS = –10 V
0.2
ID = –2 A
–0.5 A, –1.0 A
0.1
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.1 –0.2
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –5 V
–10 V
ID = –2 A
–10
–25 V
–4
–20
–8
VDS
VDD = –5 V
–10 V
–30
VGS
–25 V
–12
–40
–16
–50
0
4
8
12 16
Gate Charge Qg (nc)
–20
20
Forward Transfer Admittance vs.
Drain Current
5
2
Tc = –25°C
1
25°C
0.5
75°C
0.2
0.1
0.05
VDS = –10 V
Pulse Test
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1 –2 –5
Drain Current ID (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
500
Ciss
200
100
Coss
50
Crss
20 VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = –10 V, VDD = –10 V
duty ≤ 1 %
200
100
50
td(off)
tf
20
tr
10
td(on)
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 6
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