2SJ547-E Просмотр технического описания (PDF) - Renesas Electronics
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2SJ547-E Datasheet PDF : 8 Pages
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2SJ547
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
–2 A
ID = –5 A
0.3 VGS = –4 V
–1 A
0.2
–5 A
–1 A, –2 A
0.1
–10 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.1 –0.2
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10 –20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–50 V
–4
–40
VDS
–60
VGS
VDD = –10 V
–25 V
–50 V
–80
ID = –10 A
–100
0
8
16 24 32
Gate Charge Qg (nc)
–8
–12
–16
–20
40
Forward Transfer Admittance vs.
Drain Current
100
30
10
Tc = –25°C
3
25°C
1
75°C
0.3
VDS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
Ciss
200
100
Coss
50
20 VGS = 0
Crss
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
300
100
td(off)
tf
30
tr
10
td(on)
3
1
–0.1 –0.2
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
–0.5 –1 –2 –5 –10 –20
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 7
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