2SJ547 Просмотр технического описания (PDF) - Renesas Electronics
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2SJ547 Datasheet PDF : 8 Pages
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2SJ547
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.16 Ω typ.
• 4 V gate drive devices
• High speed switching
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
G
123
REJ03G0894-0300
(Previous: ADE-208-658A)
Rev.3.00
Sep 07, 2005
D
1. Gate
2. Drain
3. Source
S
Rev.3.00 Sep 07, 2005 page 1 of 7
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