2SJ544 Просмотр технического описания (PDF) - Renesas Electronics
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2SJ544 Datasheet PDF : 8 Pages
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2SJ544
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
–10 A
0.08
–20 A
0.06
ID = –50 A
VGS = –4 V
0.04
–50 A
–10 A, –20 A
0.02
–10 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–50 V
–4
–40
–8
VDS
VDD = –10 V
–25 V
–60
VGS
–50 V
–12
–80
–16
ID = –30 A
–100
0
40
80
120 160
Gate Charge Qg (nc)
–20
200
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
25°C
3
75°C
1
0.3
VDS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
500
td(off)
tf
200
100
tr
50
20
10
–0.1 –0.3
td(on)
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
–1 –3 –10 –30 –100
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 7
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