2SJ544 Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

2SJ544

Silicon P Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SJ544

Main Characteristics

Power vs. Temperature Derating

80

60

40

20

0

0

50

100

150

200

Case Temperature Tc (°C)

Typical Output Characteristics

–50

–10 V

Pulse Test

–8 V

–3.5 V

–40

–5 V

–4 V

–30

–3 V

–20

–10

0

0

–2.5 V

VGS = –2 V

–2 –4 –6 –8 –10

Drain to Source Voltage VDS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–5

Pulse Test

–4

–3

–2

ID = –50 A

–1

–20 A

–10 A

0

0

–4 –8 –12 –16 –20

Gate to Source Voltage VGS (V)

Rev.3.00 Sep 07, 2005 page 3 of 7

Maximum Safe Operation Area

–1000

–300

10 µs

–100

–30

–10

–3

–1

DC

Operation in

this area is

PW

Opera=tio1n0

(mT1cs1m=(01s02s5hµ°osCt))

–0.3

limited by RDS (on)

Ta = 25°C

–0.1

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage VDS (V)

Typical Transfer Characteristics

–50

VDS = –10 V

Pulse Test

–40

–30

–20

–10

Tc = 75°C

25°C

–25°C

0

0

–1 –2 –3 –4 –5

Gate to Source Voltage VGS (V)

Static Drain to Source on State Resistance

vs. Drain Current

1

Pulse Test

0.5

0.2

0.1

0.05

VGS = –4 V

0.02

–10 V

0.01

–1

–3 –10 –30 –100 –300 –1000

Drain Current ID (A)

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