2SJ544 Просмотр технического описания (PDF) - Renesas Electronics
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2SJ544 Datasheet PDF : 8 Pages
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2SJ544
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Value
–60
±20
–30
–120
–30
–30
77
75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note: 4. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IDSS
IGSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
–60
±20
—
—
–1.0
—
—
15
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.028
0.038
25
2500
1300
300
25
150
350
220
–0.95
100
Max
—
—
–10
±10
–2.0
0.037
0.055
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = –1 mA, VDS = –10 V
ID = –15 A, VGS = –10 V Note 4
ID = –15 A, VGS = –4 V Note 4
ID = –15 A, VDS = –10 V Note 4
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –10 V
ID = –15 A
RL = 2 Ω
IF = –30 A, VGS = 0
IF = –30 A, VGS = 0
diF/dt = 50 A/µs
Rev.3.00 Sep 07, 2005 page 2 of 7
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