2SJ542-E Просмотр технического описания (PDF) - Renesas Electronics
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производитель
2SJ542-E Datasheet PDF : 8 Pages
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2SJ542
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–20
–10 V
–6 V
Pulse Test
–16
–4 V
–3.5 V
–3 V
–12
–8
–2.5 V
–4
VGS = –2 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–3.0
Pulse Test
–2.5
–2.0
–1.5
ID = –20 A
–1.0
–0.5
–10 A
–5 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
1000
300
100
10 µs
30
10
3
1
OtlihmpisietearadretiboaynisDRinCDOSPp(oeWrna)=tio1n0(mTcs1=(11m20s50sh°Coµt)s)
0.3
Ta = 25°C
0.1
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–20
VDS = –10 V
Pulse Test
–16
–12
–8
–4 Tc = 75°C
25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
VGS = –4 V
0.05
–10 V
0.02
0.01
–1
–2 –5 –10 –20 –50 –100
Drain Current ID (A)
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