2SJ540-E Просмотр технического описания (PDF) - Renesas Electronics
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производитель
2SJ540-E Datasheet PDF : 8 Pages
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2SJ540
Reverse Drain Current vs.
Source to Drain Voltage
–10
–8
–10 V
–6
–5 V
–4
–2
VGS = 0, 5 V
Pulse Test
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
IAP = –12 A
VDD = –25 V
16
duty < 0.1 %
Rg ≥ 50 Ω
12
8
4
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Tc = 25°C
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C
PDM
D = PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Vin
–15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D.U.T
VDD
Avalanche Waveform
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.4.00 Jun 05, 2006 page 5 of 7
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