2SJ539 Просмотр технического описания (PDF) - Renesas Electronics
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2SJ539 Datasheet PDF : 8 Pages
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2SJ539
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
–1 A
0.4
–2 A
ID = –5 A
0.3 VGS = –4 V
0.2
0.1
–10 V
–5 A
–1 A, –2 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.1 –0.2
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10 –20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–50 V
–4
–40
VDS
–60
VGS
–80
VDD = –10 V
–25 V
–50 V
ID = –10 A
–100
0
8
16 24 32
Gate Charge Qg (nc)
–8
–12
–16
–20
40
Forward Transfer Admittance vs.
Drain Current
100
30
10
Tc = –25°C
3
25°C
1
75°C
0.3
VDS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
Ciss
200
Coss
100
50
20 VGS = 0
Crss
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
1000
300
100
30
10
Switching Characteristics
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
td(off)
tf
tr
td(on)
3
1
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 7
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