2SJ535 Просмотр технического описания (PDF) - Renesas Electronics
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2SJ535 Datasheet PDF : 8 Pages
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2SJ535
Reverse Drain Current vs.
Source to Drain Voltage
–50
–40
–30
–10 V
–5 V
–20
–10
VGS = 0
Pulse Test
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
IAP = –30 A
VDD = –25 V
80
duty < 0.1 %
Rg ≥ 50 Ω
60
40
20
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Tc = 25°C
0.3
0.2
0.1
0.1
0.05
0.03 0.02
0.011shot pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 3.57°C/W, Tc = 25°C
PDM
D = PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Vin
–15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D.U.T
VDD
Avalanche Waveform
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.4.00 Sep 07, 2005 page 5 of 7
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