2SJ534-E Просмотр технического описания (PDF) - Renesas Electronics

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2SJ534-E

Silicon P Channel MOS FET

Renesas Electronics 

2SJ534

Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

RDS (on) = 0.050 Ω typ.

• Low drive current.

• 4 V gate drive devices.

• High speed switching.

Outline

RENESAS Package code: PRSS0003AD-A

(Package name: TO-220FM)

G

123

REJ03G0884-0500

(Previous: ADE-208-589C)

Rev.5.00

Sep 07, 2005

D

1. Gate

2. Drain

3. Source

S

Rev.5.00 Sep 07, 2005 page 1 of 7

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