2SJ532 Просмотр технического описания (PDF) - Renesas Electronics
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2SJ532 Datasheet PDF : 8 Pages
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2SJ532
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
VGS = –4 V
0.08
–5 A
–10 A
ID = –20 A
0.04
0
–40
–10 V
0
40
–20 A
–5 A, –10 A
80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
Pulse Test
500
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
–0.1 –0.3 –1 –3 –10 –30 –100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–50 V
–4
–40
VGS
VDS
–60
VDD = –10 V
–25 V
–50 V
–80
ID = –20 A
–100
0
16
32
48 64
Gate Charge Qg (nc)
–8
–12
–16
–20
80
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
25°C
3
75°C
1
0.3
VDS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
Ciss
Coss
100
Crss
30
VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
1000
500
200
100
50
Switching Characteristics
VGS = –10 V, VDD = –30 V
PW = 10 µs, duty ≤ 1 %
td(off)
tf
tr
20
td(on)
10
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 7
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