2SJ518AZTR-E Просмотр технического описания (PDF) - Renesas Electronics
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2SJ518AZTR-E Datasheet PDF : 7 Pages
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2SJ518
Static Drain to Source on State Resistance
vs. Temperature
1.0
Pulse Test
0.8
–0.5 A, –1 A
ID = –2 A
0.6 VGS = –4 V
0.4
0.2
–10 V
–2 A
–0.5 A, –1 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
–0.1 –0.2
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–50 V
–4
–40
VDS
–60
VGS
VDD = –10 V
–25 V
–50 V
–80
ID = –2 A
–100
0
4
8
12 16
Gate Charge Qg (nc)
–8
–12
–16
–20
20
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25°C
2
25°C
1
75°C
0.5
0.2
0.1
–0.1 –0.2
–0.5 –1
VDS = –10 V
Pulse Test
–2 –5 –10
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
1000
300
Ciss
100
Coss
30
Crss
10
3
VGS = 0
f = 1 MHz
1
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
100
50
td(off)
tf
20
td(on)
10
5
tr
2
1
–0.1 –0.2
VGS = –10 V, VDD = –30 V
Ta = 25°C, duty ≤ 1 %
–0.5 –1 –2 –5 –10
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 6
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