2SJ517YYTR-E Просмотр технического описания (PDF) - Renesas Electronics
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2SJ517YYTR-E Datasheet PDF : 7 Pages
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2SJ517
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note 1
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch Note 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. When using the aluminium ceramic board (12.5 × 20 × 0.7 mm)
Value
–20
±10
–2
–4
–2
1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IDSS
IGSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min Typ Max
–20 —
—
±10 —
—
—
— –10
—
— ±10
–0.5 — –1.5
— 0.18 0.24
— 0.27 0.43
1.8 3.0 —
— 320 —
— 190 —
—
90
—
—
14
—
—
75
—
—
90
—
—
90
—
— –0.95 —
—
70
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –20 V, VGS = 0
VGS = ±8 V, VDS = 0
ID = –1 mA, VDS = –10 V
ID = –1 A, VGS = –4 V Note 3
ID = –1 A, VGS = –2.5 V Note 3
ID = –1 A, VDS = –10 V Note 3
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –4 V
ID = –1 A
RL = 10 Ω
IF = –2 A, VGS = 0
IF = –2 A, VGS = 0
diF/dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 6
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