J506 Просмотр технического описания (PDF) - Renesas Electronics

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J506

Silicon P Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SJ506(L), 2SJ506(S)

Silicon P Channel MOS FET

Description

High speed power switching

REJ03G0873-0500

(Previous: ADE-208-548C)

Rev.5.00

Sep 07, 2005

Features

• Low on-resistance

RDS (on) = 0.065 Ω typ. (at VGS = –10 V, ID = –5 A)

• Low drive current

• High speed switching

• 4 V gate drive devices.

Outline

RENESAS Package code: PRSS0004ZD-B

(Package name: DPAK (L)-(2) )

4

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (S) )

4

D

123

123

G

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.5.00 Sep 07, 2005 page 1 of 7

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