2SJ504 Просмотр технического описания (PDF) - Renesas Electronics
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2SJ504 Datasheet PDF : 8 Pages
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2SJ504
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–50
–10 V
–40 –8 V
–6 V
–5 V
–4.5 V
Pulse Test
–4 V
–30
–3.5 V
–20
–3 V
–10
VGS = –2.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
ID = –20 A
–0.8
–10 A
–0.4
–5 A
–2 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
–1000
–300
–100
10 µs
–30
–10
–3
–1
–0.3
OtlihmpisietearadretiboaynisRinDDSC(oOnp)PerWati=on1(0Tmc =s112(m1050°ssChµo)st)
Ta = 25°C
–0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–50
VDS = –10 V
Pulse Test
–40
–30
–20
–10
Tc = 75°C
–25°C
25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
0.02
VGS = –4 V
–10 V
0.01
–1
–2 –5 –10 –20 –50 –100
Drain Current ID (A)
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