2SJ668 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SJ668 Datasheet PDF : 6 Pages
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ID – VDS
−5
−10 −6 −4. −3.5
Common source
Tc = 25°C
−8
−4
Pulse test
−3
−3
−2.8
−2
VGS = −2.5V
−1
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Drain-source voltage VDS (V)
2SJ668
−10
−10 −6 −4
−8 −8
−6
ID – VDS
−3.5
Common source
Tc = 25°C
Pulse test
−4
−3
−2
VGS = −2.5 V
0
0
−2
−4
−6
−8
−10
Drain-source voltage VDS (V)
−10
Common source
VDS = −10 V
Pulse test
−8
ID – VGS
−6
25
−4
−2
100
Tc = −55°C
0
0
−1
−2
−3
−4
−5
Gate-source voltage VGS (V)
VDS – VGS
−2.0
Common source
Tc= 25°C
−1.6
Pulse test
−1.2
−0.8
−0.4
0
0
−5
−2.5
ID = −1.2 A
−4
−8
−12
−16
−20
Gate-source voltage VGS (V)
⎪Yfs⎪ − ID
100
Common source
VDS = −10 V
Pulse test
10
Tc = −55°C
100
25
1
0.1
−0.1
−1
−10
−100
Drain current ID (A)
RDS (ON) − ID
0.5
Common source
Tc = 25°C
Pulse test
0.4
0.3
0.2
−4 V
0.1
VGS = −10 V
0
0
−2
−4
−6
−8
−10
Drain current ID (A)
3
2009-07-13
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