2SJ544 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ544 Datasheet PDF : 10 Pages
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2SJ544
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
10
0.1 0.3
VGS = 0, Ta = 25 °C
1 3 10 30 100
Reverse Drain Current I DR (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
V DD = –10 V
V DS
–25 V
–20
–50 V
–4
ID = –30 A
–40
–8
V GS
–60
–80
–12
V DD = –10 V
–25 V
–50 V
–16
–100
0
40 80 120 160
Gate Charge Qg (nc)
–20
200
1000
500
200
Switching Characteristics
t d(off)
tf
100
tr
50
t d(on)
20
V GS = –10 V, V DD = –30 V
10
PW = 5 µs, duty <= 1 %
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I D (A)
6
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