2SJ544 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SJ544

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ544

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS

Gate to source breakdown voltage V(BR)GSS

Zero gate voltege drain current IDSS

Gate to source leak current

I GSS

Gate to source cutoff voltage

VGS(off)

Static drain to source on state

RDS(on)

resistance

RDS(on)

Forward transfer admittance

|yfs|

Input capacitance

Ciss

–60

±20

—

—

–1.0

—

—

15

—

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 4. Pulse test

Typ Max Unit

—

—

V

—

—

V

—

–10 µA

—

±10 µA

—

–2.0 V

0.028 0.037 Ω

0.038 0.055 Ω

25

—

S

2500 —

pF

1300 —

pF

300 —

pF

25

—

ns

150 —

ns

350 —

ns

220 —

ns

–0.95 —

V

100 —

ns

Test Conditions

ID = –10mA, VGS = 0

IG = ±100µA, VDS = 0

VDS = –60 V, VGS = 0

VGS = ±16V, VDS = 0

ID = –1mA, VDS = –10V

ID = –15A, VGS = –10V Note4

ID = –15A, VGS = –4V Note4

ID = –15A, VDS = –10V Note4

VDS = –10V

VGS = 0

f = 1MHz

VGS = –10V, ID = –15A

RL = 2Ω

IF = –30A, VGS = 0

IF = –30A, VGS = 0

diF/ dt =50A/µs

3

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