2SJ542 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ542 Datasheet PDF : 9 Pages
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2SJ542
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I Note1
D(pulse)
Body-drain diode reverse drain current IDR
Avalanche current
I Note3
AP
Avalanche energy
E Note3
AR
Channel dissipation
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Ratings
Unit
–60
V
±20
V
–18
A
–72
A
–18
A
–18
A
27
mJ
60
W
150
°C
–55 to +150
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Zero gate voltege drain current IDSS
Gate to source leak current
I GSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
–60
±20
—
—
–1.0
—
—
10
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 4. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
–10 µA
—
±10 µA
—
–2.0 V
0.050 0.065 Ω
0.070 0.110 Ω
16
—
S
1300 —
pF
650 —
pF
180 —
pF
14
—
ns
95
—
ns
190 —
ns
135 —
ns
–1.0 —
V
70
—
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –9A, VGS = –10V Note4
ID = –9A, VGS = –4V Note4
ID = –9A, VDS = -10V Note4
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –9A
RL =3.33Ω
IF = –18A, VGS = 0
IF = –18A, VGS = 0
diF/ dt =50A/µs
2
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