2SJ540 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ540

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Main Characteristics

2SJ540

Power vs. Temperature Derating

80

60

40

20

0

50

100

150

200

Case Temperature Tc (°C)

–100

–50

Maximum Safe Operation Area

10 µs

–20

–10

–5

–2

–1

–0.5

PW

OtlihmpisietearadretiboaynisRinDDCSO(poe=rna1)ti0onm(sTc(1=2s5h℃ot))

–0.2

–0.1 Ta = 25 °C

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–10

–10 V

–5 V

–3.5 V

–8

–4 V

Pulse Test

–6

–3 V

–4

–2

–2.5 V

VGS = –2 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–10

V DS = –10 V

Pulse Test

–8

–6

–4

Tc = 75 °C

25 °C

–2

–25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

3

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