2SJ540 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ540 Datasheet PDF : 9 Pages
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2SJ540
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I Note1
D(pulse)
Body-drain diode reverse drain current IDR
Avalenche current
I Note3
AP
Avalenche energy
E Note3
AR
Channel dissipation
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Ratings
Unit
–60
V
±20
V
–12
A
–48
A
–12
A
–12
A
12
mJ
50
W
150
°C
–55 to +150
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Zero gate voltege drain current IDSS
Gate to source leak current
I GSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
–60
±20
—
—
–1.0
—
—
5
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 4. Pulse test
Typ
—
—
—
—
—
0.11
0.16
8
580
300
85
10
55
85
60
–1.2
60
Max
—
—
–10
±10
–2.0
0.15
0.23
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –6A, VGS = –10V Note4
ID = –6A, VGS = –4V Note4
ID = –6A, VDS = –10V Note4
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –6A
RL = 6Ω
IF = –12A, VGS = 0
IF = –12A, VGS = 0
diF/ dt = 50A/µs
2
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