2SJ535 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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Компоненты Описание
производитель
2SJ535 Datasheet PDF : 9 Pages
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2SJ535
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Pulse Test
–4
–3
–2
ID = –50 A
–1
–10 A
–20 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
0.2
0.1
0.05 VGS = –4 V
0.02
0.01
–1
–10 V
Pulse Test
–3 –10 –30 –100 –300 –1000
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.1
Pulse Test
0.08
–20 A
–10 A
0.06
I D = –50 A
–50 A
VGS = –4 V
0.04
–10,–20A
0.02 VGS = –10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25 °C
10
25 °C
3
75 °C
1
0.3
V DS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I D (A)
4
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