2SJ534 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ534

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ534

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–3.0

Pulse Test

–2.5

–2.0

–1.5

I D = –20 A

–1.0

–0.5

–10 A

–5 A

0

–4 –8 –12 –16 –20

Gate to Source Voltage V GS (V)

Static Drain to Source on State Resistance

vs. Drain Current

1

Pulse Test

0.5

0.2

0.1

VGS = –4 V

0.05

–10 V

0.02

0.01

–1

–2 –5 –10 –20 –50 –100

Drain Current I D (A)

Static Drain to Source on State Resistance

vs. Temperature

0.30

Pulse Test

0.25

0.20

0.15

I D = –20 A –5, –10 A

0.10 VGS = –4 V

0.05

0

–40

–10 V

–5, –10, –20 A

0

40 80 120 160

Case Temperature Tc (°C)

Forward Transfer Admittance vs.

Drain Current

100

30

Tc = –25 °C

10

25 °C

3

75 °C

1

0.3

0.1

–0.1

–0.3 –1 –3

Drain Current

V DS = –10 V

Pulse Test

–10 –30 –100

I D (A)

4

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