2SJ534 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ534

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Main Characteristics

2SJ534

Power vs. Temperature Derating

40

30

20

10

0

50

100

150

200

Case Temperature Tc (°C)

1000

Maximum Safe Operation Area

300

100

10 µs

30

10

3

1

0.3

OtlihmpisietearadretiboaynisDRinCDOSPpe(Worant=i)o1n0(Tmc1s=1m(2015s0s°hCµo)st)

0.1 Ta = 25 °C

0.1 0.3 1 3 10 30 100

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–10 V –6 V

–20

–4 V

–16

–3.5 V

Pulse Test

–3 V

–12

–8

–2.5 V

–4

VGS = –2 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–20

V DS = –10 V

Pulse Test

–16

–12

25°C

Tc = 75°C

–8

–25°C

–4

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

3

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