2SJ533 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ533

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Main Characteristics

2SJ533

Power vs. Temperature Derating

40

30

20

10

0

50

100

150

200

Case Temperature Tc (°C)

–1000

Maximum Safe Operation Area

–100

–10

–1

10

OtlihmpisietearadretiboaynisRiDnDCSO(poenrPa)Wtio=n1(0Tcms=1(21m15s0sh°0oCtµ))s

µs

–0.1 Ta = 25 °C

–0.1

–1

–10

–100

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–50

–8 V

–40

–3.5 V

–5 V

Pulse Test

–4 V

–30

VGS = –10 V

–3 V

–20

–10

–2.5 V

0

–2 –4 –6

Drain to Source Voltage

–2 V

–8 –10

V DS (V)

Typical Transfer Characteristics

–50

V DS = –10 V

Pulse Test

–40

–30

–20

–10

Tc = 75 °C

25 °C

-25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

3

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