2SJ532 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ532 Datasheet PDF : 9 Pages
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2SJ532
1000
500
Body–Drain Diode Reverse
Recovery Time
Pulse Test
200
100
50
20
10
–0.1
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
–0.3 –1 –3 –10 –30 –100
Reverse Drain Current I DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
Ciss
Coss
100
Crss
30
VGS = 0
10 f = 1 MHz
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
V DD = –10 V
–25 V
–20
–50 V
–4
V DS
–40
–8
V GS
–60
–12
V DD = –10 V
–25 V
–80
–50 V
–16
–100 I D = –20 A
0
16 32 48 64
Gate Charge Qg (nc)
–20
80
1000
500
200
100
50
Switching Characteristics
VGS = –10 V, V DD = –30 V
PW = 10 µs, duty < 1 %
td(off)
tf
tr
20
td(on)
10
–0.1 –0.3 –1 –3
Drain Current
–10 –30
I D (A)
–100
5
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