2SJ529S Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ529S Datasheet PDF : 9 Pages
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2SJ529(L),2SJ529(S)
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 50 A / µs
5
VGS = 0, Ta = 25 °C
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
200
Crss
100
50
Coss
20
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
V DD = –10 V
–25 V
–20
–50 V
–4
–40
V DS
–60
I D = –10 A
–8
V GS
–12
–80
–100
0
V DD = –10 V
–25 V
–50 V
8
16 24 32
Gate Charge Qg (nc)
–16
–20
40
1000
300
100
30
10
Switching Characteristics
V GS = –10 V, V DD = –30 V
Pw = 5 µs, duty < 1 %
t d(off)
tf
tr
t d(on)
3
1
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I D (A)
5
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