2SJ529S Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SJ529S

Silicon P-Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ529(L),2SJ529(S)

Silicon P Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.12 Ω typ.

• 4 V gete drive devices

• High speed switching

Outline

DPAK–2

D

G

S

ADE-208-654A (Z)

2nd. Edition

Jun 1998

4

4

12 3

12 3

1. Gate

2. Drain

3. Source

4. Drain

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