2SJ518 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SJ518

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ518

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS

Gate to source breakdown voltage V(BR)GSS

Zero gate voltege drain current IDSS

Gate to source leak current

I GSS

Gate to source cutoff voltage

VGS(off)

Static drain to source on state

RDS(on)

resistance

RDS(on)

Forward transfer admittance

|yfs|

Input capacitance

Ciss

–60

±20

—

—

–1.0

—

—

1.2

—

Output capacitance

Coss —

Reverse transfer capacitance

Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 4. Pulse test

5. Marking is “AZ”

Typ Max

—

—

—

—

—

–10

—

±10

—

–2.0

0.35 0.46

0.45 0.63

2.0 —

220 —

110 —

35

—

10

—

11

—

45

—

30

—

–1.05 —

50

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test Conditions

ID = –10mA, VGS = 0

IG = ±100µA, VDS = 0

VDS = –60 V, VGS = 0

VGS = ±16V, VDS = 0

ID = –1mA, VDS = –10V

ID = –1A, VGS = –10V Note4

ID = –1A, VGS = –4V Note4

ID = –1A, VDS = –10V Note4

VDS = –10V

VGS = 0

f = 1MHz

VGS = –10V, ID = –1A

RL = 30Ω

ID = –2A, VGS = 0

IF = –2A, VGS = 0

diF/ dt = 50A/µs

3

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