2SJ518 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

производитель

2SJ518

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ518

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

I Note2

AP

EAR

Pch Note3

–60

±20

–2

–4

–2

–2

0.34

1

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Note:

1. PW ≤ 10µs, duty cycle ≤ 1 %

2. value at Tch = 25°C, Rg ≥ 50 Ω

3. Value at when using the aluminaceramic board (12.5x20x0.7mm)

Unit

V

V

A

A

A

A

mJ

W

°C

°C

2

Share Link: