2SJ517 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ517 Datasheet PDF : 8 Pages
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2SJ517
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
20 VGS = 0
f = 1 MHz
10
0
–4
–8 –12 –16 –20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
V DD = –5 V
–10 V
–10
–4
VDS
–20
–8
V DD = –5 V
–30
–10 V
–12
VGS
–40
–16
–50
0
4
8
12 16
Gate Charge Qg (nc)
–20
20
Switching Characteristics
500
200
t d(off)
100
tf
50
tr
20
t d(on)
10
5
–0.1 –0.2
VGS = –4 V, V DD = –10 V
duty < 1 %
–0.5 –1 –2 –5 –10
Drain Current I D (A)
5
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